Similarly, another study explored the thermal atomic layer etching of aluminum nitride, utilizing hydrogen fluoride and boron trichloride in a sequential manner. This method allowed for effective ...

Plasma etching and atomic layer etching (ALE) are critical processes in the fabrication of semiconductor devices, particularly as the industry moves towards smaller and more complex structures.

Laser Thermal Laboratory, Department of Mechanical Engineering, University of California, Berkeley, California 94720, United States ...

By investigating new approaches to making digital memory at the atomic scale ... the etch rate increased for the nitride and the oxide layer using the hydrogen fluoride plasma instead of the ...

To meet the ever-growing demand for data storage, researchers are refining the way digital memory is manufactured at the atomic scale. To improve data storage ... and silicon oxide were tested ...

By investigating new approaches to making digital memory at the atomic scale ... the etch rate increased for the nitride and the oxide layer using the hydrogen fluoride plasma instead of the ...

By investigating new approaches to making digital memory at the atomic scale, researchers engaged in a public ... When silicon nitride and silicon oxide were tested separately, the etch rate increased ...

In modern detection techniques, high-precision magnetic field detection plays a crucial role. Atomic magnetometers stand out among other devices due to their high sensitivity, large detection range, ...