Abstract: Due to their smaller parasitic components, gallium nitride high-electron-mobility transistors (GaN HEMTs) are faster than their silicon counterparts. Therefore, they are suitable for ...

Their chip-scale packaging (CSP) approach minimizes parasitics, enhancing efficiency and thermal performance. A cross-section of EPC’s GaN power transistor structure is shown in Figure 1. To achieve a ...

By employing material such as silicon (Si), germanium (Ge) and gallium arsenide (GaAs), electronics ... electronic components such as diodes, transistors and integrated chips.

Lehigh University researchers developed germanium selenide and tin sulfide materials demonstrating photovoltaic absorption of 80% efficiency in solar cells, far exceeding the theoretical ...

Abstract: This paper proposes an emission driver for active-matrix organic light emitting diode (AMOLED) displays using amorphous indium-gallium-zinc-oxide thin-film transistors (a-IGZO TFTs). The ...