最主要原因是PMOS的Rds (on)比较大，意味着DC-DC的损耗大，效率低，综合下来，DC-DC上管还是用NMOS的多。 在rohm的产品目录中，可看出内阻差别，NMOS都是几个毫欧，PMOS一般是几十毫欧。

最主要原因是PMOS的Rds (on)比较大，意味着DC-DC的损耗大，效率低，综合下来，DC-DC上管还是用NMOS的多。 在rohm的产品目录中，可看出内阻差别，NMOS都是几个毫欧，PMOS一般是几十毫欧。

MOS管也叫场效应管，它可以分为PMOS管（P沟道型）和NMOS（N沟道型）管，属于绝缘栅场效应管。NMOS也叫N型金属氧化物半导体，而由NMOS组成的电路就是 ...

我喜欢使用比“nmos”或“pmos”更具体的东西，所以我将模型名称（图3）更改为nmos_90nm和pmos_90nm。 NMOS和PMOS型号名称。 图3。 NMOS和PMOS型号名称。

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...

Overall device density, however, is limited by the minimum pMOS/nMOS separation. And while buried power rails help to reduce the overall cell footprint, they leave the p/n separation unchanged. The ...

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate ...