最主要原因是PMOS的Rds (on)比较大，意味着DC-DC的损耗大，效率低，综合下来，DC-DC上管还是用NMOS的多。 在rohm的产品目录中，可看出内阻差别，NMOS都是几个毫欧，PMOS一般是几十毫欧。

最主要原因是PMOS的Rds (on)比较大，意味着DC-DC的损耗大，效率低，综合下来，DC-DC上管还是用NMOS的多。 在rohm的产品目录中，可看出内阻差别，NMOS都是几个毫欧，PMOS一般是几十毫欧。

我喜欢使用比“nmos”或“pmos”更具体的东西，所以我将模型名称（图3）更改为nmos_90nm和pmos_90nm。 NMOS和PMOS型号名称。 图3。 NMOS和PMOS型号名称。

MOS管也叫场效应管，它可以分为PMOS管（P沟道型）和NMOS（N沟道型）管，属于绝缘栅场效应管。NMOS也叫N型金属氧化物半导体，而由NMOS组成的电路就是 ...

PMOS transistors are less vulnerable to substrate noise since they’re placed in separate wells; designers implement guard rings to attenuate the substrate noise propagation. However, substrate ...

For years—decades, in fact—the NMOS transistor world has been on cruise control. NMOS is naturally faster and its performance has scaled better than PMOS. PMOS has had a cost advantage. But lately, it ...

The complementary nmos-pmos devices qualified for -40 to +175°C and can be incorporated into automotive AEC-Q100 Grade 0 products. “For the first time, customers are able to design highly integrated ...