来自MSN1 个月
Semiconductor material for short-wave infrared sensors developed
To address the significant lattice constant mismatch (approximately 2.0%) between InAsPSb and the InP substrate, the researchers refined the metamorphic lattice relaxation growth technique.
EurekAlert!1 个月
New semiconductor opens the “eyes” of advanced industries
To address the significant lattice constant mismatch (approximately 2.0%) between InAsPSb and the InP substrate, the researchers refined the metamorphic lattice relaxation growth technique.