The ORNL research team recently met with unexpectedly high success using a gallium nitride semiconductor for sensor electronics. A transistor made with the material maintained operations near the ...

Meanwhile, it is easy to implement and thus could contribute to the large-scale fabrication of 2D transistors "Other potential methods of better using this native oxide of gallium (controlling the ...

A wire-bonded die consisting of over 20 gallium nitride high-electron mobility transistors, seen here under a microscope, could be used in nuclear sensing equipment because of its high resistance ...

For example, strained silicon/germanium heterojunctions have been utilized to develop high-mobility transistors and ... heterojunctions using gallium nitride (GaN), indium gallium nitride (InGaN), and ...

NIST's modified field-effect transistor can count single photons ... electron micrograph of top of device), it penetrates the gallium arsenide absorbing layer and separates electrons from the ...

The European solar research organization, Solliance announced it has achieved a 21.5% efficiency for a flexible copper indium gallium selenide (CIGS) tandem solar cell based on perovskite.

An international group of scientists has proposed a new copper indium gallium selenide (CIGS) solar cell structure using antimony trisulfide (Sb2S3) as the back surface field (BSF) layer.